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| Ordering number : ENA1169 SFT1202 SANYO Semiconductors DATA SHEET SFT1202 Applications * NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features * * * * * Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Tc=25C Conditions Ratings 180 180 150 7 2 3 400 1 15 150 --55 to +150 Unit V V V V A A mA W W C C Marking : T1202 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 73008EA TI IM TC-00001478 No. A1169-1/4 SFT1202 Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol ICBO IEBO hFE fT Cob VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=80V, IE=0A VEB=4V, IC=0A VCE=5V, IC=100mA VCE=10V, IC=300mA VCB=10V, f=1MHz IC=1A, IB=100mA IC=0.5A, IB=50mA IC=1A, IB=100mA IC=10A, IE=0A IC=100A, RBE=0 IC=1mA, RBE= IE=10A, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 200 140 12 110 65 0.85 180 180 150 7 50 1460 70 165 100 1.2 Ratings min typ max 1 1 560 MHz pF mV mV V V V V V ns ns ns Unit A A Package Dimensions unit : mm (typ) 7518-003 6.5 5.0 2.3 1.5 Package Dimensions unit : mm (typ) 7003-003 6.5 5.0 2.3 4 4 1.5 0.5 0.5 5.5 7.0 5.5 7.0 0.8 1.6 1.2 7.5 1 0.6 2 0.8 0.85 0.7 0.85 0.5 3 0 to 0.2 1.2 2.5 1.2 0.6 0.5 1 2 3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 2.3 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA 2.3 2.3 Switching Time Test Circuit IB1 OUTPUT IB2 VR RB PW=20s D.C.1% INPUT RL 50 + 100F VBE= --5V + 470F VCC=75V IC=10IB1= --10IB2=0.5A No. A1169-2/4 SFT1202 A 2.0 IC -- VCE 250 mA 200 16 0m A 120m 100mA 80mA 2.0 IC -- VCE 100mA 80mA mA 60mA Collector Current, IC -- A 1.5 Collector Current, IC -- A 60mA 1.5 40mA 12 0mA 20mA mA 40mA 500 1.0 20mA 1.0 200 mA 10mA 10mA 0.5 5mA 0.5 5mA 2mA 1mA 0 0 0.1 0.2 0.3 IB=0mA 0.4 0.5 IT13542 0 0 1 2 3 4 IB=0mA 5 IT13543 Collector-to-Emitter Voltage, VCE -- V 2.5 IC -- VBE Collector-to-Emitter Voltage, VCE -- V 1000 hFE -- IC VCE=5V 2.0 7 5 VCE=5V Ta=75C 25C Collector Current, IC -- A DC Current Gain, hFE 3 2 --25C 1.5 100 7 5 3 2 10 0.01 1.0 Ta=7 5 C 0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT13544 25C --25C 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 Base-to-Emitter Voltage, VBE -- V 3 Collector Current, IC -- A 7 IT13545 fT -- IC Cob -- VCB f=1MHz VCE=10V Gain-Bandwidth Product, fT -- MHz 2 5 Output Capacitance, Cob -- pF 2 3 5 7 2 3 5 7 3 2 100 7 5 10 7 5 3 2 10 0.01 0.1 Collector Current, IC -- A 7 3 2 1.0 IT13546 3 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 VCE(sat) -- IC Collector-to-Base Voltage, VCB -- V 2 5 7 100 IT13547 VBE(sat) -- IC IC / IB=10 IC / IB=10 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V 1.0 0.1 7 5 3 2 Ta= --25C 7 25 a=75C T --25C C 5 25C 75C 3 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A IT13548 Collector Current, IC -- A IT13549 No. A1169-3/4 SFT1202 5 3 2.5 2 ASO ICP=3A <10s 5 3 2.5 2 ASO ICP=3A <10s 1m s s 500 100 s s 500 100 s 0m n s1 tio era s 1m s m 10 Collector Current, IC -- A 1.0 7 5 3 2 0.1 7 5 3 2 Collector Current, IC -- A IC=2A IC=2A DC 10 era n tio DC op 0m s 1.0 7 5 3 2 0.1 7 5 3 op 0 10 ms 0.01 0.01 2 3 5 7 0.1 Ta=25C Single pulse 2 2 3 5 7 1.0 2 3 5 7 10 Collector-to-Emitter Voltage, VCE -- V 1.2 2 3 5 7100 2 3 IT13555 0.01 0.01 2 3 5 7 0.1 Tc=25C Single pulse 2 3 5 7 1.0 2 3 5 7 10 PC -- Ta Collector-to-Emitter Voltage, VCE -- V 16 15 14 2 3 5 7100 2 3 IT13556 PC -- Tc Collector Dissipation, PC -- W Collector Dissipation, PC -- W 0 20 40 60 80 100 120 140 160 IT13553 1.0 12 10 8 6 4 2 0.8 0.6 0.4 0.2 0 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C Case Temperature, Tc -- C IT13554 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2008. Specifications and information herein are subject to change without notice. PS No. A1169-4/4 |
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